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SPTECH SILICON NPN POEWR TRANSISTOR BU931
SPTECH SILICON NPN POEWR TRANSISTOR BU931
SPTECH SILICON NPN POEWR TRANSISTOR BU931
SPTECH SILICON NPN POEWR TRANSISTOR BU931
SPTECH SILICON NPN POEWR TRANSISTOR BU931
SPTECH SILICON NPN POEWR TRANSISTOR BU931
SPTECH SILICON NPN POEWR TRANSISTOR BU931
SPTECH SILICON NPN POEWR TRANSISTOR BU931

SPTECH SILICON NPN POEWR TRANSISTOR BU931

Specifications

  • Collector–Base Voltage (VCBO): 500 V

  • Collector–Emitter Voltage (VCEO): 400 V

  • Emitter–Base Voltage (VEBO): 5 V

  • Collector Current (IC): 15 A continuous, 30 A peak

  • Base Current (IB): 1 A continuous, 5 A peak

  • Power Dissipation (Ptot): 175 W at TC = 25 °C

  • Junction Temperature (Tj): up to 150 °C

  • Thermal Resistance Junction-to-Case (RthJC): 1 °C/W

  • Collector-Emitter Saturation Voltage (VCE(sat)): 1.6 V @ IC = 7 A, up to 1.8 V @ IC = 10 A

  • Base-Emitter Saturation Voltage (VBE(sat)): 2.2 V typical @ IC = 7 A

  • DC Current Gain (hFE): approx. 300 @ IC = 5 A, VCE = 10 V

  • Operating Temperature Range: –65 °C to +150 °C

Non-returnable
₹300.00 ₹500.00
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